Properties of GaAs/InGaAs quantum well solar cells under low concentration operation-Reference-Cited by-同舟云学术

Properties of GaAs/InGaAs quantum well solar cells under low concentration operation

Published:2000-01 Issue:1 Volume:60 Page:19-26
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Yang Ming-ju,Yamaguchi Masafumi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. P.R. Griffin, J. Barnes, K.W.J. Barnham, I. Cabodi, M. Mazzer, J.S. Roberts, R. Grey, G. Hill, M.A. Pate, A. Marti, J.C. Marotok, R.F. Reyna, L. Cuadra, M. Yang, M. Yamaguchi, Proceedings of the 14th European Photovoltaic Solar Energy Conference and Exhibition, 1998, in press.

2. Numerical prediction of InGaAs/GaAs MQW solar cell characteristics under concentrated sunlight

3. Modeling the spectral response of the quantum well solar cell

4. Statistics of the Recombinations of Holes and Electrons

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