Investigation of the M/a-Si:H/c-Si structure as a Schottky contact with a diffusion barrier layer
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Preparation of (n) a-Si: H/(p) c-Si heterojunction solar cells
2. Charge carrier transport in n–i–p and p–i–n a-Si/c-Si heterojunction solar cells
3. Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
4. Hydrogenated amorphous-silicon/crystalline-silicon heterojunctions: properties and applications
5. Electronic conductivity of hydrogenated nanocrystalline silicon films
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1. On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures;Semiconductors;2014-08-31
2. On optical reflection at heterojunction interface of thin film solar cells;Solar Energy Materials and Solar Cells;2013-04
3. Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiN_x:H) based Schottky diodes;Turkish Journal of Physics;2010-01-01
4. The influence of ohmic back contacts on the properties of a-Si:H Schottky diodes;Solid-State Electronics;2007-03
5. Sensitivity of the a-Si:H/c-Si structure to alcohol vapors;Sensors and Actuators B: Chemical;2002-02
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