Grain effect in electronic properties of silicon epitaxial nanostructures-Reference-Cited by-同舟云学术

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Grain effect in electronic properties of silicon epitaxial nanostructures

Published:1998-02 Issue:1-4 Volume:10 Page:148-153
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Filonov A.B.,Kholod A.N.,Borisenko V.E.,Saúl A.,Bassani F.,d'Avitaya F.Arnaud

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference17 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Light Emission at Room Temperature from Si/CaF 2 Multilayers

3. Quantum Confined Luminescence inSi/SiO2Superlattices

4. Electroluminescent device based on silicon nanopillars

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier transport and related phenomena in nanosize periodic silicon/insulator structures;Materials Science and Engineering: B;2003-08

2. Carrier dynamics modeling in a precharged Si/CaF2 heterostructure;Journal of Applied Physics;2001-06

3. Current oscillations in semiconductor-insulator multiple quantum wells;Physical Review B;1999-12-15

4. Electroluminescence simulation of multiquantum well silicon structures;Journal of Applied Physics;1999-05-15

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