Microcrystallisation in Si:H: the effect of gas pressure in Ar-diluted SiH4 plasma-Reference-Cited by-同舟云学术

Microcrystallisation in Si:H: the effect of gas pressure in Ar-diluted SiH4 plasma

Published:2003-09 Issue:4 Volume:79 Page:519-526
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Jana Madhusudan,Das Debajyoti

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Ch. Hollenstein, U. Kroll, A.A. Howling, J. Dutta, J.-L. Dorrier, J. Meier, R. Tscharner, A. Shah, Proceedings of the 11th European PVSEC, Montreux, 1992, p. 132.

2. Comparison of A-Si:H Films Prepared by RP- and Conventional P-CVD

3. Heterogeneity in microcrystalline-transition state: Origin of Si-nucleation and microcrystallization at higher rf power from Ar-diluted SiH4 plasma

4. Role of hydrogen in controlling the growth of μc-Si:H films from argon diluted SiH4 plasma

5. Roles ofSiH3andSiH2Radicals in Particle Growth in rf Silane Plasmas

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of silane flow rate on structural, electrical and optical properties of silicon thin films grown by VHF PECVD technique;Materials Chemistry and Physics;2013-08

2. Growth of Mixed-Phase Amorphous and Ultra Nanocrystalline Silicon Thin Films in the Low Pressure Regime by a VHF PECVD Process;Silicon;2012-03-03

3. Highly controllable dual-gate microcrystalline silicon thin film transistor processed at low temperature (T<180°C);Solid-State Electronics;2011-09

4. Nanocrystalline Silicon Thin Films Fabricated at 80°C by Using Electron Cyclotron Resonance Chemical Vapor Deposition;Plasma Science and Technology;2010-10

5. Microscopic and macroscopic manifestations of percolation transitions in a semiconductor composite;Physical Review B;2009-12-10