Oxygen-related micro-defects in Czochralski silicon annealed at enhanced stress conditions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry
Reference5 articles.
1. Stress-induced oxygen precipitation in CzSi
2. Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon
3. Thermal double donors in silicon
4. Photoluminescence studies of Czochralski-grown silicon pressure-annealed at <=1000 K
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1. Effect of annealing under stress on defect structure of Si–Ge;Materials Science and Engineering: B;2008-12
2. Dislocation-related photoluminescence from processed Si;Journal of Materials Science: Materials in Electronics;2007-12-11
3. Stress dependent structure of annealed nitrogen-doped Cz-Si;Materials Science and Engineering: B;2006-10
4. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si;physica status solidi (a);2006-07
5. Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods;The European Physical Journal Applied Physics;2004-07
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