Author:
Kaczer B.,Degraeve R.,Rasras M.,De Keersgieter A.,Van de Mieroop K.,Groeseneken G.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. Stathis JH. Physical and predictive models of ultra thin oxide reliability in CMOS devices and circuits. IRPS Proc, 2001. p. 132–149
2. The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown;Alam;IEDM Tech Dig,2000
3. Undertanding soft and hard breakdown statistics, prevalence ratios and energy dissipation during breakdown runaway;Sune;IEDM Tech Dig,2001
4. A concept of gate oxide lifetime limited by “B-mode” stress induced leakage currents in direct tunneling regime;Okada;Symp VLSI Technol Dig,1999
5. Okada K. The gate oxide lifetime limited by `B-mode' stress induced leakage current and the scaling limit of silicon dioxides in the direct tunneling regime. in Ref. [16]
Cited by
29 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献