ESD protection design for CMOS RF integrated circuits using polysilicon diodes-Reference-Cited by-同舟云学术

ESD protection design for CMOS RF integrated circuits using polysilicon diodes

Published:2002-06 Issue:6 Volume:42 Page:863-872
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ker Ming-Dou,Chang Chyh-Yih

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

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5. A methodology for measurement and characterization of substrate noise in high frequency circuits;Gharpurey,1999

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