Some observation dealing with the failures of IGBT transistors in high power converters-Reference-Cited by-同舟云学术

Some observation dealing with the failures of IGBT transistors in high power converters

Published:1998-06 Issue:6-8 Volume:38 Page:1325-1330
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Januszews S.,Kociszewska-Szezerbik M.,Świa̧tek H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Brunner H. et al.:3300V IGBT module for traction application. EPE'95, Seville, vol. 1 p. 56–59

2. Coquery G. et al.: Reliability of the 400A IGBT modules for traction converters — contribution on the power thermal fatigue influence on life expectancy. EPE'95, Seville, vol. 1, 60–65

3. Duong s. et al.: Short circuit behaviour for PT and NPT IGBT devices — protection against explosion of the case by fuses. EPE'95, Seville, vol. 1, 249–254.

4. Investigation of destroyed parts of surface of high power semiconductor devices in service conditions;Januszewski,1995

5. IGBT transistor failures in high power converters;Januszewski,1996

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