On the effect of power cycling stress on IGBT modules-Reference-Cited by-同舟云学术

On the effect of power cycling stress on IGBT modules

Published:1998-06 Issue:6-8 Volume:38 Page:1347-1352
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Cova P.,Fantini F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Failure analysis of bonding wires in power transistor modules;Ohga,1991

2. A powercycling-induced failure mechanism of IGBT multichip modules;Malberti,1995

3. Power cycling reliability of IGBT power modules;Sankaran,1997

4. Reliability evaluation of power SCR's;Franceschini,1992

5. Failure analysis of power modules: a look at the packaging and reliability of large IGBTs.;de Lambilly;IEEE Trans. on CHMT,1993

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