Simulation of electronic structure of Si–Si bond traps in oxide/nitride/oxide structure-Reference-Cited by-同舟云学术

Simulation of electronic structure of Si–Si bond traps in oxide/nitride/oxide structure

Published:1998-09 Issue:9 Volume:38 Page:1457-1464
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Gritsenko V.A.,Novikov Yu.N.,Morokov Yu.N.,Wong H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Gritsenko VA. Electronic structure and optical properties of silicon nitride. In: AV Rzhanov, editors. Material science monograph. Elsevier, Amsterdam, 1988. 34. p. 138–87

2. Gritsenko VA. Structure and electronic properties of amorphous insulators in silicon MIS structures. Novosibirsk, Russia: Ed. Science, 1993

3. Electronic structure of silicon nitride;Robertson;Philos. Mag.,1991

4. Injection of electrons and holes from metal in MNOS structures;Gritsenko;Microelectronics (Sov),1988

5. Electrically active point defects in amorphous silicon nitride: an illumination and charge injection study;Krick;J Appl Phys,1988

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