FIB voltage contrast measurement for enhanced circuit repairs-Reference-Cited by-同舟云学术

FIB voltage contrast measurement for enhanced circuit repairs

Published:1999-06 Issue:6-7 Volume:39 Page:1003-1008
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Desplats Romain,Benteo Bruno,Perdu Philippe

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Integration of Focused Ion Beam System in a Failure Analysis Environment;Lee,1991

2. Effect of Focused Ion Beam Irradiation on MOS Transistors;Campbell,1997

3. Electrical Biasing and Voltage Contrast Imaging in a Focused Ion Beam System;Campbell,1995

4. Electrical degradation of CMOS devices due to FIB exposure;Benbrik,1998

5. Electron beam testing: Method and applications;Feuerbaum;Scanning electron microscopy,1983

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