New rapid method for lifetime determination of gate oxide validated with bipolar/CMOS/DMOS technology-Reference-Cited by-同舟云学术

New rapid method for lifetime determination of gate oxide validated with bipolar/CMOS/DMOS technology

Published:1999-06 Issue:6-7 Volume:39 Page:759-763
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Gagnard X.,Taurin M.,Bonnaud O.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

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3. Modelling and characterisation of gate oxide reliability;Lee;IEEE Transactions on Electron Devices,1988

4. Measurement of Fowler-Nordheim tunnelling currents in MOS structures under charge trapping conditions;Nissan-Cohen;Solid State Electronics,1985

5. The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunnelling stress;Chang;IEEE Transactions on Electron Devices,1998

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1. Ultra Low Temperature High Aspect Ratio Oxide Punch Through Etching;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. VDMOSFET model parameter extraction based on electrical and optical measurements;Microelectronics Journal;2001-07

3. Off-line wafer level reliability control: unique measurement method to monitor the lifetime indicator of gate oxide validated within bipolar/CMOS/DMOS technology;SPIE Proceedings;2000-08-23

4. Building-in reliability, application to bipolar/CMOS/DMOS technology;Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)

5. Unique measurement to monitor the gate oxide lifetime indicator, case studies;Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)