A new method to extract diode parameters under the presence of parasitic series and shunt resistance-Reference-Cited by-同舟云学术

A new method to extract diode parameters under the presence of parasitic series and shunt resistance

Published:2000-02 Issue:2 Volume:40 Page:355-358
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ranuárez J.C,Ortiz-Conde A,Garcı́a Sánchez F.J

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Semiconductor material and device characterization;Schroeder,1990

2. An approximate analytical expression for the equation of the ideal diode with series and shunt resistance;Ortiz-Conde;Electronics Lett.,1992

3. New method of parameter extraction from dark I–V curve;Kaminski;Photovoltaic Specialist Conference,1997

4. Solar cells;Hovel,1975

5. Direct extraction of diode parameters using lateral and vertical optimization;Ortiz-Conde;Solid-St. Electron.,1999

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