DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs-Reference-Cited by-同舟云学术

DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs

Published:1999-12 Issue:12 Volume:39 Page:1759-1763
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Meneghesso Gaudenzio,Massari Giovanni,Buttari Dario,Bortoletto Andrea,Maretto Massimo,Zanoni Enrico

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Semi-analytical analysis for optimization of 0.1 μm InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability;Rohdin,1997

2. Breakdown mechanisms in pseudomorphic InAlAsInxGa1−xAs high electron mobility transistors on InP. Part II: On-state;Dickmann;Journal of Applied Physics,1995

3. Impact ionization in GaAs MESFETs;Hui;IEEE Electron Device Letters,1990

4. On-state breakdown in power HEMTs: measurements and modelling;Somerville,1997

5. A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs;Somerville;IEEE Electron Device Letters,1998

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures;IEICE Electronics Express;2010

2. Off-state and on-state breakdown of GaAs MESFET, PHEMT and Power PHEMT;physica status solidi (c);2006-03

3. Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors;Journal of Applied Physics;2004-06-15

4. Reliability of 70 nm metamorphic HEMTs;Microelectronics Reliability;2004-06

5. Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors;Journal of Applied Physics;2003-09-15