Author:
Jargelius M.,Gustafsson U.,Bakowski M.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Diffusion lengths in epitaxial GaAs by angle lapped junction method;Norwood;Solid State Electron.,1965
2. Surface breakdown in silicon planar diodes equipped with field plate;Conti;Solid State Electron.,1972
3. Experimental verification of inhomogeneous field distribution in negatively bevelled high-voltage p–n junctions by means of photomultiplication;Bakowski;Electron. Lett.,1974
4. Joy, D. C., Monte Carlo Modelling for Electron Microscopy and Microanalysis. Oxford University Press, Oxford, 1995
5. Rottner, K., Savage, S., André, J., Ramberg, L. P., Frischholz, M. and Helbig, R., OBIC measurements on 6H-SiC p+–n-mesa diodes with floating field rings. In Proc. Int. Conf. on Silicon Carbide and Related Materials, Inst. Phys. Conf. Ser., 1995, 142, 721–728
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献