INTRODUCTORY INVITED PAPERFailure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMTs

Author:

Meneghesso Gaudenzio,Magistrali Fabrizio,Sala Danila,Vanzi Massimo,Canali Claudio,Zanoni Enrico

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

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2. Canali, C., Magistrali, F., Sangalli, M., Tedesco, C., Zanoni, E., Castellaneta, G., and Marchetti, F., Reliability aspect of commercial AlGaAs/GaAs HEMTs. In Proc. IRPS'91, 1991, pp. 206–213

3. Ohmic contact penetration and encroachment in GaAs/AlGaAs and GaAs FETs;Goronkin;IEEE Trans. Electron Dev.,1989

4. Redistribution of aluminum in MODFET ohmic contact;Christou;Solid State Electron.,1986

5. Belhadj, A., Dumas, J. M., Vuchener, C. and Paugam, J., Study of failure mechanisms of GaAs–AlGaAs field effect transistors with modulated doping. In Proc. 6th Int. Conf. on Reliability and Maintainability, Strasbourg, France, 1988, pp. 229–233

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