Operation of α(6H)-SiC pressure sensor at 500 °C-Reference-Cited by-同舟云学术

Operation of α(6H)-SiC pressure sensor at 500 °C

Published:1998-04 Issue:1-3 Volume:66 Page:200-204
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Okojie Robert S.,Ned Alexander A.,Kurtz Anthony D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Deformation and fracture of small silicon crystals;Pearson;Acta Met.,1957

2. Cree Research, Durham, NC.

3. High-voltage 6H-SiC pn-junction diodes;Matus;Appl. Phys. Lett.,1991

4. α(6H)-SiC pressure sensors for high temperature applications;Okojie,1996

5. α(6H)-SiC pressure sensors at 350 °C;Okojie,1996

Cited by 86 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review;Materials;2023-12-16

2. Selective removal of 4H-SiC porous structures caused by photoelectric chemical etching via post oxidation annealing;Semiconductor Science and Technology;2023-09-14

3. Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test;Micromachines;2023-02-28

4. Advanced Approaches in Micro- and Nano-sensors for Harsh Environmental Applications: A Review;Modern Nanotechnology;2023

5. Two-step femtosecond laser etching for bulk micromachining of 4H–SiC membrane applied in pressure sensing;Ceramics International;2022-05