The effects of thermal treatment on the anisotropic etching behavior of Cz- and Fz-silicon-Reference-Cited by-同舟云学术

The effects of thermal treatment on the anisotropic etching behavior of Cz- and Fz-silicon

Published:2000-10 Issue:1-2 Volume:86 Page:86-90
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Hein A,Finkbeiner S,Marek J,Obermeier E

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Wacker's Atlas for Characterization of Defects in Silicon;Rauh,1986

2. E. Dornberger, Prediction of OSF Ring Dynamics and Grown-in Voids in Czochralski Silicon Crystals, Ph.D. Thesis, KU Leuven, Belgium, 1997.

3. The Effects of Impurities in Silicon on Anisotropic Etching in KOH-Solutions;Hein,1998

4. A formation of crystal defects in carbon-doped Czochralski-grown silicon after a three-step internal gettering anneal;Wirajanakula;Jpn. J. Electrochem. Soc.,1991

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