Rutile-type TiO2 thin film for high-k gate insulator-Reference-Cited by-同舟云学术

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Rutile-type TiO2 thin film for high-k gate insulator

Published:2003-01 Issue:2 Volume:424 Page:224-228
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kadoshima Masaru,Hiratani Masahiko,Shimamoto Yasuhiro,Torii Kazuyoshi,Miki Hiroshi,Kimura Shinichiro,Nabatame Toshihide

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Thermodynamic stability of binary oxides in contact with silicon

3. National Institute of Standards and Technology, Phase Equilibrium Diagrams, ver. 2.1, The American Ceramic Society, Westerville, 1998, Fig. 4258

4. Study of mechanochemical phase transformation of TiO2 by EPR. Effect of phosphate

5. Kinetics of the Anatase-Rutile Transformation

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