Surface modification on low dielectric constant material—methylsilsesquioxane-Reference-Cited by-同舟云学术

Surface modification on low dielectric constant material—methylsilsesquioxane

Published:2003-09 Issue:1-2 Volume:441 Page:248-254
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chen Chung-Hsien,Huang Fon-Shan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. High-performance interconnects: an integration overview

2. Interconnect limits on gigascale integration (GSI) in the 21st century

3. Allied Signal Advanced Materials, Accuspin 418 Flowable Spin-on Polymer, Product Bulletin, Sunnyvale, CA, 1996

4. H.D. Jeong, H.S. Park, H.J. Shin, B.J. Kim, H.K. Kang, M.Y. Lee, Proceeding of the IEEE 1999 International Interconnect Technology Conference, San Francisco, CA, May 24–26, 1999, IEEE, 1999, p. 190

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of film structure on damage to low-kSiOCH film during plasma exposure;Journal of Physics D: Applied Physics;2009-11-09

2. Direct photobleaching of acrylates in polymethylsilsesquioxane films by 193nm irradiation;Polymer;2008-01

3. Comparative Study of Copper Diffusion in Plasma Treated Low-k Dielectric Thin Film Using XPS and SIMS;Advanced Materials Research;2007-11

4. Electrical properties of nanoporous F doped SiO2 low-k thin films prepared by sol-gel method with catalyst HF;Journal of Porous Materials;2006-08

5. The study of forming gas plasma on HSG-7000 silsesquioxane-based low-k dielectric film using X-ray photoelectron spectroscopy;Journal of Materials Science: Materials in Electronics;2006-08