Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry-Reference-Cited by-同舟云学术

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Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry

Published:1999-07 Issue:1-2 Volume:349 Page:135-146
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Strass A.,Bieringer P.,Hansch W.,Fuenzalida V.,Alvarez A.,Luna J.,Martil I.,Martinez F.L.,Eisele I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Infrared, Raman, and X‐Ray Diffraction Studies of Silicon Oxide Films Formed from SiH4 and N 2 O Chemical Vapor Deposition

2. IEEE Trans;Machida;Electron. Devices,1994

3. Low defect density insulating films deposited on room temperature substrates

4. Molecular beam deposition of high quality silicon oxide dielectric films

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