Characterization of ZnSe films grown on GaAs substrates with InxGal−xAs and AlxGa1−xAs buffer layers-Reference-Cited by-同舟云学术

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Characterization of ZnSe films grown on GaAs substrates with InxGal−xAs and AlxGa1−xAs buffer layers

Published:2000-09 Issue:1-2 Volume:373 Page:37-40
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Luyo-Alvarado J.,Santana-Aranda M.A.,Meléndez-Lira M.,López-López M.,Méndez V.H.,Vidal M.A.,Yonezu H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Blue‐green laser diodes

2. Blue/greenpnjunction electroluminescence from ZnSe‐based multiple quantum‐well structures

3. Photodegradation of CdxZn1−xSe quantum wells

4. Generation of degradation defects, stacking faults, and misfit dislocations in ZnSe-based films grown on GaAs

5. Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-05

2. Study of the new β-In2S3 containing Na thin films Part I: Synthesis and structural characterization of the material;Journal of Crystal Growth;2002-05

3. Study of low temperature elaborated tailored optical band gap β-In2S3−3xO3x thin films;Journal of Crystal Growth;2002-02

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