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InAs/GaAs lasers with very thin active layer

  • Published:2000-12 Issue:1-2 Volume:380 Page:233-236
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Oswald J,Hulicius E,Pangrác J,Melichar K,Šimeček T,Petrı́ček O,Vančura M,Hradil J

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Threshold current of single quantum well lasers: The role of the confining layers

2. Quantum Semiconductor Structures;Weisbuch,1991

3. Workshop Proceedings, EW MOVPE VIII;Oswald,1999

4. Workshop Proceedings, EW MOVPE VIII;Kovác,1999

5. Multidimensional quantum well laser and temperature dependence of its threshold current

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-field scanning optical microscopy of quantum dot broad area laser diodes;Journal of Materials Science: Materials in Electronics;2007-03-30

2. Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy;Applied Surface Science;2006-10

3. Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2006-07

4. InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy;Journal of Crystal Growth;2003-02

5. Lasers with δ InAs layers in GaAs;Materials Science and Engineering: B;2002-01
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