Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma-Reference-Cited by-同舟云学术

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Polycrystalline silicon film growth in a SiF4/SiH4/H2 plasma

Published:1999-01 Issue:1-2 Volume:337 Page:55-58
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee B.,Quinn L.J.,Baine P.T.,Mitchell S.J.N.,Armstrong B.M.,Gamble H.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. High performance low-temperature poly-Si n-channel TFTs for LCD

2. Comparative study of large grains and high-performance TFTs in low-temperature crystallized LPCVD and APCVD amorphous silicon films

3. Analysis of current voltage characteristics of low-temperature-processed polysilicon thin-film transistors

4. Deposition and characterisation of silicon grown in a SiF4/SiH4/H2 mixture for TFT applications

5. EMRS’93;Quinn;J. Micro. Eng.,1994

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. From amorphous to microcrystalline silicon: Moving from one to the other by halogenated silicon plasma chemistry;Philosophical Magazine;2009-10

2. Erratum to “Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films” [Surface Science 600 (19) (2006) 4418–4425];Surface Science;2007-03

3. Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films;Surface Science;2007-03

4. Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films;Surface Science;2006-10

5. Some current issues in the use and application of ionised plasma for silicon semiconductor processing research;Vacuum;2001-08

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