Nanostructure of Ge deposited on Si(001): a study by XPS peak shape analysis and AFM-Reference-Cited by-同舟云学术

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Nanostructure of Ge deposited on Si(001): a study by XPS peak shape analysis and AFM

Published:1999-01 Issue:1-2 Volume:338 Page:165-171
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Simonsen A.Cohen,Schleberger M.,Tougaard S.,Hansen J.L.,Larsen A.Nylandsted

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Surface nanostructure determination by x‐ray photoemission spectroscopy peak shape analysis

2. Accuracy of the non-destructive surface nanostructure quantification technique based on analysis of the XPS or AES peak shape

3. Nanostructure of thin metal films on silicon(111) investigated by x-ray photoelectron spectroscopy: Inelastic peak shape analysis

4. S.N. Magonov, M.H. Whangbo, Surface Analysis with STM and AFM, Experimental and Theoretical Aspects of Image Analysis, VCH, Weinheim, 1996.

5. Ge growth on Si(001) studied by x-ray photoelectron spectroscopy peak shape analysis and atomic force microscopy

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1. Transformation of addimers >Ge=Ge<, >Ge=Si< AND >Si=Si< on the relaxed side of Si (001) (4 × 2);Surface;2021-12-30

2. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28

3. A simple approach to measuring thick organic films using the XPS inelastic background;Surface and Interface Analysis;2017-09-28

4. N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric;IEEE Transactions on Electron Devices;2016-07

5. Influence of the Localization of Ge Atoms within the Si(001)(4 × 2) Surface Layer on Semicore One-Electron States;Computation;2016-03-03

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