Polycrystalline silicon thin films for microsystems: correlation between technological parameters, film structure and electrical properties-Reference-Cited by-同舟云学术

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Polycrystalline silicon thin films for microsystems: correlation between technological parameters, film structure and electrical properties

Published:2001-12 Issue:1-2 Volume:401 Page:235-242
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Michelutti L,Chovet A,Stoemenos J,Terrot J.-M,Ionescu M.A

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. 4th International Conference on Solid-State Sensors and Actuators, Tokyo, Japan;Fan,1987

2. Projection displays and MEMS: timely convergence for a bright future

3. PhD Thesis, Process development for 3D silicon microstructures with application to mechanical sensor devices;Peeters,1994

4. PhD Thesis, Réévaluation des proprı́etés piézorésistives á haute température de films de polysilicium LPCVD dopé au bore;Kleimann,1997

5. Fundamentals of Microfabrication;Madou,1997

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1. Epitaxy;Silicon Sensors and Actuators;2022

2. Faceting of twin grain boundaries in polysilicon films;physica status solidi (a);2009-10-14

3. In-line method for extracting the temperature coefficient of resistance of surface-micromachined polysilicon thin films;Sensors and Actuators A: Physical;2007-05

4. Barrier height dependence of low-frequency noise in poly-Si thin film transistors;SPIE Proceedings;2004-05-25

5. Optical properties of silicon thin films related to LPCVD growth condition;Thin Solid Films;2004-02

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