The change of the electronic properties of CIGS devices induced by the ‘damp heat’ treatment-Reference-Cited by-同舟云学术

The change of the electronic properties of CIGS devices induced by the ‘damp heat’ treatment

Published:2002-02 Issue: Volume:403-404 Page:320-324
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Igalson M,Wimbor M,Wennerberg J

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. F. Karg, H. Kalwer, J. Rimmasch, V. Probst, W. Riedl, W. Stetter, H. Vogt, M. Lampert, Inst. Phys. Conf. Ser. No 152: Section H, 1998 IOP Publishing Ltd, p. 909.

2. J. Wennerberg, J. Kessler, M. Bôdegard, L. Stolt, Proc. 2nd World Conf. Photovoltaics Solar Energy, Vienna 1998, p. 1161.

3. Influence of damp heat on the electrical properties of Cu(In,Ga)Se 2 solar cells

4. Transient capacitance spectroscopy of defect levels in CIGS devices

5. Classification of metastabilities in the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se2 solar cells

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