Properties of semiconductor scintillators and combined detectors of ionizing radiation based on ZnSe(Te,O)/pZnTe–nCdSe structures-Reference-Cited by-同舟云学术

Properties of semiconductor scintillators and combined detectors of ionizing radiation based on ZnSe(Te,O)/pZnTe–nCdSe structures

Published:2002-02 Issue:1 Volume:19 Page:213-217
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Focsha A.A,Gashin P.A,Ryzhikov V.D,Starzhinskiy N.G,Gal'chinetskii L.P,Silin V.I

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference8 articles.

1. A new ZnSe1-xTex scintillator: luminescence mechanism

2. Book of Abstracts, 12th ICCG, Tel-Aviv;Ryzhikov,1998

3. The use of semiconductor scintillation crystals AIIBVI in radiation instruments

4. Scintillation Crystals and Radiation Detectors Based on Them;Atroshchenko,1998

5. n-ZnSe/p-ZnTe/n-CdSe tandem solar cells

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