High-quality GaAs-related lateral junctions on Si by conformal growth-Reference-Cited by-同舟云学术

High-quality GaAs-related lateral junctions on Si by conformal growth

Published:2001-06 Issue:1-2 Volume:17 Page:267-270
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Gil-Lafon E.,Videcoq A.,Napierala J.,Castelluci D.,Pimpinelli A.,Gérard B.,Jimenez J.,Avella M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference5 articles.

1. B. Gérard, D. Pribat, R. Bisaro, E. Costard, J. Nagle, J. Ricciardi, M. Dupuy, Evolution of surface and thin film microstructures, in: H.A. Atwater, E. Chason, M.H. Grabow, M.G. Lagally (Eds.), Mater. Res. Soc. Proc. 280, Pittsburgh, PA, 1993, pp. 675–680

2. High quality InP on Si by conformal growth

3. High quality GaAs on Si by conformal growth

4. Kinetic Modelling Of The Selective Epitaxy Of GaAs On Patterned Substrates By Hvpe. Application to the Conformal Growth Of Low Defect Density GaAs Layers On Silicon

5. Control of the growth morphologies of GaAs stripes grown on patterned substrates by HVPE

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