ZnSSe-based ultra-violet photodiodes with extremely high detectivity-Reference-Cited by-同舟云学术

ZnSSe-based ultra-violet photodiodes with extremely high detectivity

Published:2003-07 Issue:1-2 Volume:23 Page:21-26
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Lai L.S.,Sou I.K.,Law C.W.Y.,Wong K.S.,Yang Z.,Wong G.K.L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference7 articles.

1. Semiconductor ultraviolet detectors

2. Low-noise photodetectors based on heterojunctions of AlGaN–GaN

3. Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes

4. Photoresponse studies of ZnSSe visible–blind ultraviolet detectors: A comparison to ZnSTe detectors

5. Molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors

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