Analytical model for the current-voltage characteristics of a silicon resistor at liquid helium temperatures-Reference-Cited by-同舟云学术

Analytical model for the current-voltage characteristics of a silicon resistor at liquid helium temperatures

Published:1990-12 Issue:12 Volume:30 Page:1152-1159
ISSN:0011-2275
Container-title:Cryogenics
language:en
Short-container-title:Cryogenics

Author:

Simoen E.,Dierickx B.,Deferm L.,Claeys C.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference29 articles.

1. Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K;Dierickx;IEEE Trans Elect Dev,1988

2. Operation of majority and minority carrier MOSFET's at liquid helium temperature;Dierickx;J Phys Paris,1988

3. Dierickx, B., Simoen, E., Deferm, L., Claeys, C. and Declerek, G. The charge transport in a silicon resistor at Liquid Helium Temperatures J Appl Phys in press

4. Impact ionization of impurities in heavily compensated germanium;Lambert;J Phys Chem Sol,1962

5. Impurity ionization in n-type germanium;Palmier;Phys Rev B,1972

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1. Reliability Aspects of Cryogenic Silicon Technologies;Low Temperature Electronics;2001

2. The cryogenic behaviour of metal-oxide-semiconductor transistors fabricated in high-resistivity silicon substrates;Semiconductor Science and Technology;1994-09-01

3. The hysteresis and transient behavior of Si metal‐oxide‐semiconductor transistors at 4.2 K. II. Prekink clockwise hysteresis regime;Journal of Applied Physics;1993-03-15

4. Selfheating effects in silicon resistors operated at cryogenic ambient temperatures;Solid-State Electronics;1993-01