Low-noise preamplifiers for 1 K operation using gallium arsenide MESFETs of very low 1/f noise

Author:

Camin D.V.,Pessina G.,Previtali E.,Ranucci G.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference16 articles.

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1. Heterostructure and Compound Semiconductor Devices;Low Temperature Electronics;2001

2. Circuits and Applications;Device and Circuit Cryogenic Operation for Low Temperature Electronics;2001

3. Optimization of high-Q low frequency NMR measurement;Czechoslovak Journal of Physics;1996-05

4. High sensitivity NMR measurements at low temperature and frequency;Physica B: Condensed Matter;1994-02

5. Front-end in GaAs;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1992-05

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