Integrated circuits at cryogenic temperatures
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference16 articles.
1. Temperature dependence of the saturation current of MOST's
2. MOSFET Operation at 4.2 K
3. MOST's at cryogenic temperatures
4. Behaviour of silicon pn junctions at temperatures between 4-2 and 300° K†
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1. Cryogenic electronic memory infrastructure for physically related “continuity of care records” of frozen cells;Cryogenics;2006-04
2. Evaluation of CMOS timer integrated circuits for cryogenic use;Cryogenics;1991-12
3. A temperature and pressure controlled calibration system for pressure sensors;ISA Transactions;1990-11
4. Analog multiplexer for cryogenic applications;Cryogenics;1989-05
5. Operational characteristics of CMOS op-amps at cryogenic temperatures;Solid-State Electronics;1988-02
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