Silicon junction field effect transistors at 4.2 K-Reference-Cited by-同舟云学术

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Silicon junction field effect transistors at 4.2 K

Published:1988-06 Issue:6 Volume:28 Page:394-397
ISSN:0011-2275
Container-title:Cryogenics
language:en
Short-container-title:Cryogenics

Author:

Nawrocki W.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference7 articles.

1. Semiconductor devices suitable for use in cryogenic environments;Lengeler;Cryogenics,1974

2. Cryogenic electronic amplifiers;Pozharov;Izdat Radio i Swjaz,1983

3. MOSFET behavior and circuit considerations for analog applications at 77 K;Fox;IEEE Trans Electr Dev,1987

4. Junction field effect transistors at 4.2 K;Wagner;Rev Sci Instrum,1970

5. Tin, a candidate for low temperature NMR thermometer?;Ahola;Cryogenics,1980

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5. Estimation of low temperature characteristics of JFETs from their room-temperature characteristics;Cryogenics;1996-05

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