Anomalous properties found in Cu films near below 100 nm thick deposited on Ta-Reference-Cited by-同舟云学术

Anomalous properties found in Cu films near below 100 nm thick deposited on Ta

Published:2005-01-01 Issue:6 Volume:6 Page:620-627
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Kadowaki K.¹,Fujiwara Kenji¹,Mizubayashi Hiroshi¹²

Affiliation:

1. Graduated School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki, 305-8573, Japan

2. The 21st Century Center of Excellence Program ‘Promotion of Creative, Interdisciplinary Materials Science for Novel Functions’, University of Tsukuba, Tsukuba, Ibaraki, 305-8573, Japan

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1016/j.stam.2005.06.003

Reference22 articles.

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3. Y.L. Chin, B.S. Chiou, F. Wu, Effect of the tantalum barrier layer on the electromigration and stress migration resistance of physicalvapor-deposited, Jpn. J. Appl. Phys. 41 (2002) 3057–3064.

4. X. Zhao, M. Leavy, N.P. Magtoto, A. Kelber, Copper wetting of a tantalum silicate surface: implications for interconnect technology, Appl. Phys. Let. 79 (2001) 3479–3481.

5. K. Abe, Y. Harada, M. Yoshimaru, H. Onoda, Texture and electromigration perfomance in damascene interconnects formed by reflow sputtered Cu film, J. Vac. Sci. Tech. B 22 (2004) 721–728.

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