Confinement of one-dimensional electrons in dimer row segments at Ge/Si(001) surfaces
Author:
Publisher
Informa UK Limited
Subject
General Materials Science
Link
http://www.tandfonline.com/doi/pdf/10.1016/j.stam.2004.01.017
Reference15 articles.
1. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
2. Two-dimensional periodic alignment of self-assembled Ge islands on patterned Si(001) surfaces
3. Nanoscale Structuring by Misfit Dislocations inSi1−xGex/SiEpitaxial Systems
4. Mechanism of organization of three-dimensional islands in SiGe/Si multilayers
5. Scanning tunneling microscopy of semiconductor surfaces
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