Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides-Reference-Cited by-同舟云学术

Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

Published:2007-01-01 Issue:5 Volume:8 Page:341-346
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Schlechte A.¹,Niewa R.¹²,Schmidt M.¹,Auffermann G.¹,Prots Yu.¹,Schnelle W.¹,Gnida D.³,Cichorek T.³,Schnelle W.¹,Steglich F.¹,Kniep R.¹

Affiliation:

1. Max-Planck-Institut für Chemische Physik fester Stoffe, Dresden, Germany

2. Technische Universitüät München, Department Chemie, Garching, Germany

3. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroctaw, Poland

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1016/j.stam.2007.05.002

Reference8 articles.

1. W. Meissner, G. Voigt, Ann. Phys. (Leipzig) 7 (1930) 761, 892.

2. J. Kondo, Progr. Theor. Phys. 32 (1964) 37.

3. D.L. Cox, A. Zawadowski, Adv. Phys. 47 (1998) 599.

4. Z. Henkie, T. Cichorek, A. Pietraszko, R. Fabrowski, A. Wojakowski, B.S. Kuzhel, L. K˛epiński, L. Krajczyk, A. Gukasov, P. Wiśniewski, J. Phys. Chem. Solids 59 (1998) 38.

5. M. Schmidt, T. Cichorek, R. Niewa, A. Schlechte, Yu. Prots, F. Steglich, R. Kniep, J. Phys. Condens. Matter 17 (2005) 5481.

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure, electrical and thermal properties of single-crystal BaCuGdTe₃;Dalton Transactions;2023

2. Magnetic and transport properties of low-carrier-density Kondo semimetal CeSbTe;Journal of Physics: Condensed Matter;2019-06-11

3. Origin of the −|A|T1/2 term in the resistivity of disordered ZrAs1.58Se0.39;Physical Review B;2018-04-05

4. Superconductivity and valence state in layered single-crystal HfAs1.67Te0.12;Superconductor Science and Technology;2017-12-13

5. Structural stability, electronic structure, and novel transport properties with high thermoelectric performances of ZrIrX (X $$=$$ = As, Bi, and Sb);Journal of Computational Electronics;2016-11-28