Formation and relaxation of 2D island arrays in metal(100) homoepitaxy-Reference-Cited by-同舟云学术

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Formation and relaxation of 2D island arrays in metal(100) homoepitaxy

Published:1998-09 Issue:1-4 Volume:59 Page:67-77
ISSN:0079-6816
Container-title:Progress in Surface Science
language:en
Short-container-title:Progress in Surface Science

Author:

Stoldt C.R.,Cadilhe A.M.,Bartelt M.C.,Jenks C.J.,Thiel P.A.,Evans J.W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference29 articles.

1. Rate equation approaches to thin film nucleation kinetics

2. Exact island-size distributions for submonolayer deposition: Influence of correlations between island size and separation

3. Morphological Organization in Epitaxial Growth and Removal;Evans,1998

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1. Controllable growth of low-dimensional nanostructures on well-defined surfaces;Chinese Physics B;2013-09

2. Comparative STM studies on island equilibrium shapes, shape fluctuations and island coalescence on Au(001) electrodes in chloric and sulfuric acid solutions;Electrochimica Acta;2007-05

3. Island coalescence and diffusion along kinked steps on Cu(001): Evidence for a large kink Ehrlich–Schwoebel barrier;Surface Science;2007-03

4. Analytical determination of the Landau-Ginzburg parameters of (100) metal homoepitaxial systems;The European Physical Journal B;2006-12

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