Characterization of AgGa0.25In0.75Se2 thin films
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference20 articles.
1. Characterization of p-AglnSe2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions
2. Photovoltaic performance of p-AgInSe2/n-CdS thin film heterojunctions
3. Characterization of p-AgGaSe2/n-CdS thin film heterojunction
4. Photovoltaic performance of polycrystalline thin film p-AgGaSe2/n-Zn0.5Cd0.5S heterojunctions
5. Ternary chalcopyrite semiconductors;Shay,1975
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1. Device application of AgGa0.5In0.5Se2thin films deposited by thermal sequential stacked layer method;Materials Research Express;2014-11-12
2. Theoretical investigations of substitution site and local structure distortion for tetragonal Cr2+ ion in AgGaSe2:Cr2+ compound;Materials Science and Engineering: B;2014-04
3. Structural Studies and Valence Band Splitting Parameters in Ordered Vacancy Compound AgGa7Se12;Journal of Inorganic and Organometallic Polymers and Materials;2012-11-20
4. Growth and characterization of AgGa1−xInxSe2 crystals with high indium contents;Journal of Crystal Growth;2011-03
5. Growth improvement and characterization of AgGaxIn1−xSe2 chalcopyrite crystals using the horizontal Bridgman technique;Journal of Crystal Growth;2011-01
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