Mitigating reverse recovery power losses in MOSFET switching cell using extra Schottky diodes—Application to voltage source inverter-Reference-Cited by-同舟云学术

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Mitigating reverse recovery power losses in MOSFET switching cell using extra Schottky diodes—Application to voltage source inverter

Published:2024-08 Issue: Volume:8 Page:100066
ISSN:2772-3704
Container-title:Power Electronic Devices and Components
language:en
Short-container-title:Power Electronic Devices and Components

Author:

Bououd Mohammed,Lai Yiyu,Voldoire Adrien^ORCID,Hoang Emmanuel,Béthoux Olivier

Publisher

Elsevier BV

Reference31 articles.

1. Switching performance of a SiC MOSFET body diode and SiC Schottky diodes at different temperatures;Ahmed,2017

2. Reducing switching losses in BLDC motor drives by reducing body diode conduction of MOSFETs;Brown;IEEE Transactions on Industry Applications,2015

3. One more way to increase the recovery softness of fast high-voltage diodes;Chernikov,2011

4. Zero reverse recovery in SiC and GaN Schottky diodes: A comparison;Efthymiou,2016

5. Accurate analytical switching loss model for high voltage SiC MOSFETs includes parasitics and body diode reverse recovery effects;Eskandari,2018

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