CVD growth, thermodynamical study and electrical characterization of CuBTe2 (B=A1, Ga, In) single crystals-Reference-Cited by-同舟云学术

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CVD growth, thermodynamical study and electrical characterization of CuBTe2 (B=A1, Ga, In) single crystals

Published:1984-08 Issue: Volume:10 Page:225-233
ISSN:0146-3535
Container-title:Progress in Crystal Growth and Characterization
language:en
Short-container-title:Progress in Crystal Growth and Characterization

Author:

Gombia E.,Leccabue F.,Pelosi C.,Seuret D.,Vigil O.

Publisher

Elsevier BV

Subject

General Engineering

Reference28 articles.

1. Transport Reaction in Closed Tube Process

2. New Semiconductors with the Chalcopyrite Structure

3. Thermodynamical properties of inorganic substances- Supplement;Barin,1977

4. CVT growth of CuInS2 and CuGaS2 assisted by VLS mechanisms

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compositional, structural, optical and electrical characterization of CulnTe2 grown by the tellurization of stoichiometric Cu and in in the liquid phase;Journal of Electronic Materials;1998-12

2. Crystallographic properties of some ternary and multinary Te-based semiconductors;Journal of Crystal Growth;1991-09

3. Electrical and optical properties of n- and p-type CuInTe2;Physica Status Solidi (a);1988-12-16

4. Kinetic aspects of thin film formation of ternary semiconductors;Thin Solid Films;1988-09

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