LPE growth of InGaAs/InP and AiGaInAs/InP structures-Reference-Cited by-同舟云学术

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LPE growth of InGaAs/InP and AiGaInAs/InP structures

Published:1986-01 Issue:1-4 Volume:12 Page:97-213
ISSN:0146-3535
Container-title:Progress in Crystal Growth and Characterization
language:en
Short-container-title:Progress in Crystal Growth and Characterization

Author:

Nakajima Kazuo

Publisher

Elsevier BV

Subject

General Engineering

Reference95 articles.

1. Liquid phase epitaxial growth of InGaAs on InP

2. LPE Growth of Misfit Dislocation‐Free Thick In1 − x Ga x As Layers on InP

3. Velocity‐field characteristics of Ga1−xInxP1−yAsyquaternary alloys

4. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP

5. Collected Abstracts, 4th International Conference on Crystal Growth;Sasaki,1974

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron mobility measured in undoped InGaAs epitaxial layer grown onn‐InP substrate;Applied Physics Letters;1992-11-02

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