MO-CVD growth of InGaAs using Me3Ga, AsMe3, AsH3 and Me3In or Et3In and analyses of adducts formed during the growth process
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference44 articles.
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Indium Triorganyls;In Organoindium Compounds;1991
2. Matrix isolation studies of chemical vapor deposition: isolation and characterization of the trimethylgallium-arsine adduct;Journal of the American Chemical Society;1989-11
3. Variations in trimethylindium partial pressure measured by an ultrasonic cell on an MOVPE reactor;Journal of Crystal Growth;1989-02
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