Growth and characterization of AIVBVI single crystals for IR technology and thermoelectric energy conversion-Reference-Cited by-同舟云学术

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Growth and characterization of AIVBVI single crystals for IR technology and thermoelectric energy conversion

Published:1980-01 Issue:4 Volume:3 Page:287-308
ISSN:0146-3535
Container-title:Progress in Crystal Growth and Characterization
language:en
Short-container-title:Progress in Crystal Growth and Characterization

Author:

Fano V.

Publisher

Elsevier BV

Subject

General Engineering

Reference79 articles.

1. Semiconducting Lead Chalcogenides;Ravich,1970

2. Poluprovodincovie Soedinienia, Ich Polucenia i svoistva;Abricosov,1967

3. Crystal growth and assessment of SnxPb1−xTe mixed crystals

4. Small bandgap lasers and their uses in spectroscopy

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of nonstoichiometric PbTe crystals by the vertical Bridgman method using the axial-vibration control technique;Crystallography Reports;2005-12

2. Laser-modulated epitaxy of lead telluride;Semiconductors;1998-03

3. Lead Telluride and Its Alloys;CRC Handbook of Thermoelectrics;1995-07-14

4. Use of Mössbauer Spectroscopy in the Study of IV–VI Semiconductors;Industrial Applications of the Mössbauer Effect;1986

5. The sintering of lead telluride;Journal of Materials Science;1985-08

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