MOSFET Scaling Crisis and the Evolution of Nanoelectronic Devices: The Need for Paradigm Shift in Electronics Engineering Education-Reference-Cited by-同舟云学术

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MOSFET Scaling Crisis and the Evolution of Nanoelectronic Devices: The Need for Paradigm Shift in Electronics Engineering Education

Published:2013-11 Issue: Volume:102 Page:432-437
ISSN:1877-0428
Container-title:Procedia - Social and Behavioral Sciences
language:en
Short-container-title:Procedia - Social and Behavioral Sciences

Author:

Abuelma’atti Muhammad Taher

Publisher

Elsevier BV

Subject

General Medicine

Reference3 articles.

1. C.C. Hu, Modern Semiconductor Devices for Integrated Circuits, Pearson, Boston, USA, 2010.

2. R. Waser (Editor), Nanoelectronics and Information Technology, Wiley-VCH GmbH, Wenheim, Germany, 2003.

3. B. Rogers, S. Pennathur and J. Adams, Nanotechnology, Understanding Small Systems, CRC Press, Taylor and Francis Group, Boca Raton, USA,2008.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Study of GAA Silicon Nanowire MOSFETs for Better Performance;2023 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT);2023-07-14

2. Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design;Applied Physics A;2021-01

3. Gate Engineered GAA Silicon-Nanowire MOSFET for High Switching Performance;2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS);2020-07

4. Static and CV Analysis of Gate Engineered GAA Silicon Nanowire MOSFET for High-Performance Applications;Lecture Notes in Electrical Engineering;2020

5. Nanobionics and nanoengineered prosthetics;Nanostructures for the Engineering of Cells, Tissues and Organs;2018

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