Step edge barriers versus step edge relaxation in GaAs:Sn molecular beam epitaxy-Reference-Cited by-同舟云学术

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Step edge barriers versus step edge relaxation in GaAs:Sn molecular beam epitaxy

Published:1999-09 Issue:1-3 Volume:438 Page:131-141
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Dabiran A.M.,Seutter S.M.,Stoyanov S.,Bartelt M.C.,Evans J.W.,Cohen P.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference15 articles.

1. Sb-enhanced nucleation in the homoepitaxial growth of Ag(111)

2. Surface segregation model for Sn‐doped GaAs grown by molecular beam epitaxy

3. Kinetic limitations to surface segregation during MBE growth of III?V compounds: Sn in GaAs

4. Surface segregation mechanism during two‐dimensional epitaxial growth: The case of dopants in Si and GaAs molecular‐beam epitaxy

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1. Self-assembled pit arrays as templates for the integration of Au nanocrystals in oxide surfaces;Nanoscale;2013

2. Order and disorder in the heteroepitaxy of semiconductor nanostructures;Materials Science and Engineering: R: Reports;2010-11

3. Intensity beats on RHEED oscillations during MBE growth of ZnTe;Surface Science;2008-02

4. In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs () in molecular beam epitaxy;Journal of Crystal Growth;2004-05

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