Evolution of electron states at doped semiconductor surfaces in a depletion-layer formation process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference44 articles.
1. The atomic geometry of GaAs(110) revisited
2. The geometric structures of the GaAs(111) and (110) surfaces
3. The relaxed GaAs(110) surface: Are bond-lengths conserved?
4. Atom-selective imaging of the GaAs(110) surface
5. Topographic and crystallographic characterization of a grazing-ion-bombarded GaAs(110) surface by time-of-flight ion-scattering spectrometry
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1. Evolution of electron states at an n-type InSb surface in a depletion-layer formation process: Effect of nonparabolicity of the conduction-band dispersion;Journal of Applied Physics;2010-02
2. Nonparabolic coupled Poisson-Schrödinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces;Physical Review B;2008-03-05
3. Electron States and Elementary Excitations at Semiconductor Surfaces Controlled by Adsorption;Hyomen Kagaku;2006
4. Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process;Physical Review B;2002-11-08
5. Electronic excitations in a nonparabolic conduction band of ann-type narrow-gap semiconductor;Physical Review B;2002-02-08
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