Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs() surfaces-Reference-Cited by-同舟云学术

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Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs() surfaces

Published:2003-01 Issue:1-2 Volume:523 Page:179-188
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Lowe M.J,Veal T.D,McConville C.F,Bell G.R,Tsukamoto S,Koguchi N

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference34 articles.

1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

2. Nearly ideal electronic properties of sulfide coated GaAs surfaces

3. Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED

4. Adsorption state of hydrogen sulfide on the GaAs (001)-(4×2) surface

5. Bonding states of chemisorbed sulfur atoms on GaAs

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1. Localization and other properties of electronic states in a semiconductor revealed by their response to surface doping and band-bending potential;Applied Surface Science;2024-09

2. Precision assessment of carrier concentration in semiconductors with negative electron affinity;Journal of Materials Science: Materials in Electronics;2024-06

3. Band structure of a nonparabolic two-dimensional electron gas system;Physical Review B;2023-04-25

4. On the origin of the electron accumulation layer at clean InAs(111) surfaces;Physical Chemistry Chemical Physics;2021

5. Significantly enhanced thermal conductivity of indium arsenide nanowires via sulfur passivation;Scientific Reports;2017-10-16

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