Structural and electronic properties of the Si-rich 6H-SiC surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference29 articles.
1. C.H. Park, B.H. Cheong, K.H. Lee, K.J. Chang, Phys. Rev. B 49 (1994) 4485 and references therein
2. Atomic and Electronic-Band Structures of Anomalous Carbon Dimers on3C−SiC(001)−c(2×2)
3. Temperature-Induced Semiconductingc(4×2)⇔Metallic(2×1)Reversible Phase Transition on theβ-SiC(100) Surface
4. Possibility of a Mott-Hubbard ground state for the SiC(0001) surface
5. SiC(0001): A surface Mott-Hubbard insulator
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1. Peculiar covalent bonding of C60/6H-SiC(0 0 0 1)-(3 × 3) probed by photoelectron spectroscopy;Journal of Physics: Condensed Matter;2018-11-23
2. The paradox of an insulating contact between a chemisorbed molecule and a wide band gap semiconductor surface;Phys. Chem. Chem. Phys.;2012
3. High-temperature desorption of C60covalently bound to6H-SiC(0001)-(3×3);Physical Review B;2011-08-16
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5. Introduction;Atomic and Molecular Manipulation;2011
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