Characterization of the metal-SiO2-Si interface roughness by electrical methods
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference17 articles.
1. Insulating Films on Semiconductors;Henzler,1986
2. High Field Phenomena in Thermal SiO2
3. Effect of Insulating‐Film‐Thickness Nonuniformity on Tunnel Characteristics
4. Influence of non-uniform thickness of dielectric layers on capacitance and tunnel currents
5. Proceeding of the International Conference, Dielectric Layers in Semiconductors; Novel Technologies and Devices;Aymerich-Humet,1986
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1. Electrical Characteristics Analysis at "Oxide Flat-Band Voltage" for Al-SiO2-Si Capacitor;ECS Transactions;2011-04-25
2. Effect of SiO2/Si interface roughness on gate current;Microelectronics Reliability;2001-11
3. Temperature dependence of the barrier at the tetrahedral amorphous carbon-silicon interface;Semiconductor Science and Technology;2001-05-03
4. Influence of oxide thickness nonuniformities on the tunnel current‐voltage and capacitance‐voltage characteristics of the metal‐oxide‐semiconductor system;Journal of Applied Physics;1993-11
5. The Thermal Growth of Very Thin SiO2 Films A Diffusion-Controlled Process;Physica Status Solidi (a);1989-07-16
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